Selective tuning of perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction in heterostructures compatible with magnetic tunnel junctions
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Advanced Electronic Materials - ISSN 2199-160X- (2026) p.
Comparing contact resistance of edge-, top-, and hybrid-contacted two-dimensional materials
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Physical review applied - ISSN 2331-7019-25:4 (2026) p. 1-17
Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer
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Applied physics letters - ISSN 0003-6951-128:8 (2026) p. 1-8
Optimization of Floquet fluxonium qubits with commensurable two-tone drives
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Physical review B - ISSN 2469-9950-113:5 (2026) p. 1-9
Layer and stacking effects on transport properties in steep-slope cold-metal-source FETs
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2025 International Conference on Simulation of Semiconductor Processes, and Devices-SISPAD-Annual, SEP 24-26, 2025, Grenoble, France- (2025) p.